CNY651 Datasheet, PDF (2/10 Pages) Vishay Siliconix – Optocoupler, Phototransistor Output, Very High Isolation Voltage

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CNY651 Series
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
Forward current
Forward surge current
Power dissipation
Junction temperature
OUTPUT
V_R
5
V
I_F
75
mA
t_p ≤ 10 μs
I_FSM
1.5
A
P_diss
120
mW
T_j
125
°C
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
Junction temperature
COUPLER
V_CEO
32
V
V_ECO
7
V
I_C
50
mA
t_p/T = 0.5, t_p ≤ 10 ms
I_CM
100
mA
P_diss
130
mW
T_j
125
°C
DC isolation test voltage CNY651A...ST
t=1s
V_ISO
13.9
kV
Total power dissipation
P_tot
250
mW
Ambient temperature range
T_amb
-40 to +110
°C
Storage temperature range
T_stg
-40 to +110
°C
Soldering temperature
2 mm from case, ≤ 10 s
T_sld
260
°C
Note
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
300
250
Coupled device
200
Phototransistor
150
100
IR-diode
50
0
0
40
80
120
T_amb - Ambient Temperature (°C)
Fig. 1 - Total Power Dissipation vs. Ambient Temperature
Rev. 1.0, 12-Feb-14
2
Document Number: 82566
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