BYG10 Datasheet, PDF (2/5 Pages) Vishay Siliconix – Silicon Mesa SMD Rectifier

BYG10
Vishay Telefunken
Electrical Characteristics
T_j = 25_C
Parameter
Forward voltage
Reverse current
Reverse recovery time
Test Conditions
I_F=1A
I_F=1.5A
V_R=V_RRM
V_R=V_RRM, T_j=100°C
I_F=0.5A, I_R=1A, i_R=0.25A
Type Symbol Min Typ Max Unit
V_F
1.1 V
V_F
1.15 V
I_R
1 mA
I_R
10 mA
t_rr
4 ms
Characteristics (T_j = 25_C unless otherwise specified)
100
100
10
1
0.1
0.01
0
94 9180
V_R = V_{R RM}
40
80
120 160 200
T_j – Junction Temperature ( °C )
Figure 1. Typ. Reverse Current vs. Junction Temperature
2.0
1.6
1.2
100K/W
0.8
125K/W
R_thJA=25K/W
0.4
0
0
94 9179
150K/W
40
80
120 160 200
T_amb – Ambient Temperature ( °C )
Figure 2. Max. Average Forward Current vs.
Ambient Temperature
10
T_j = 125°C
1
T_j = 75°C
0.1
0.01
0
94 9284
T_j = 25°C
0.6
1.2
1.8
2.4 3.0
V_F – Forward Voltage ( V )
Figure 3. Typ. Forward Current vs. Forward Voltage
5000
4000
T_amb= 125°C
T_amb= 100°C
3000
2000
1000
0
0
94 9544
T_amb = 75°C
T_amb= 50°C
T_amb = 25°C
I_R=0.5A, i_R=0.125A
0.2
0.4
0.6
0.8 1.0
I_F – Forward Current ( A )
Figure 4. Typ. Reverse Recovery Time vs.
Forward Current
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2 (5)
Document Number 86008
Rev. 3, 24-Jun-98