BYG10 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Silicon Mesa SMD Rectifier

Silicon Mesa SMD Rectifier
Features
D Controlled avalanche characteristics
D Glass passivated junction
D Low reverse current
D High surge current capability
D Wave and reflow solderable
Applications
Surface mounting
General purpose rectifier
BYG10
Vishay Telefunken
15 811
Absolute Maximum Ratings
T_j = 25_C
Parameter
Test Conditions
Reverse voltage
=Repetitive peak reverse voltage
Peak forward surge current
Average forward current
Junction and storage
temperature range
Pulse energy in avalanche mode,
non repetitive
(inductive load switch off)
t_p=10ms,
half sinewave
I_(BR)R=1A, T_j=25°C
Type
Symbol
Value
Unit
BYG10D V_R=V_RRM
200
V
BYG10G V_R=V_RRM
400
V
BYG10J V_R=V_RRM
600
V
BYG10K V_R=V_RRM
800
V
BYG10M V_R=V_RRM
1000
V
I_FSM
30
A
I_FAV
1.5
A
T_j=T_stg –55...+150 °C
E_R
20
mJ
Maximum Thermal Resistance
T_j = 25_C
Parameter
Test Conditions
Junction lead
Junction ambient
T_L=const.
mounted on epoxy–glass hard tissue
mounted on epoxy–glass hard tissue, 50mm² 35mm Cu
mounted on Al–oxid–ceramic (Al₂O₃), 50mm² 35mm Cu
Symbol
R_thJL
R_thJA
R_thJA
R_thJA
Value
25
150
125
100
Unit
K/W
K/W
K/W
K/W
Document Number 86008
Rev. 3, 24-Jun-98
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