BY527_05 Datasheet, PDF (2/6 Pages) Vishay Siliconix – Standard Avalanche Sinterglass Diode

BY527
Vishay Semiconductors
Maximum Thermal Resistance
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Junction ambient
l = 10 mm, T_L = constant
R_thJA
45
K/W
on PC board with spacing 25
R_thJA
100
K/W
mm
Electrical Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Forward voltage
Reverse current
Breakdown voltage
I_F = 1 A
V_F
0.9
1.0
V
I_F = 10 A
V_F
1.65
V
V_R = 800 V
I_R
0.1
1
µA
V_R = 800 V, T_j = 100 °C
I_R
5
10
µA
I_R = 100 µA, t_p/T = 0.01, t_p = 0.3
V_(BR)
1250
V
ms
Diode capacitance
Reverse recovery time
Reverse recovery charge
V_R = 4 V, f = 1 MHz
C_D
I_F = 0.5 A, I_R = 1 A, i_R = 0.25 A
t_rr
I_F = 1 A, d_i/d_t = 5 A/µs, V_R = 50 V
t_rr
I_F = 1 A, d_i/d_t = 5 A/µs
Q_rr
16
pF
4
µs
4
µs
3
µC
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
120
l
l
100
80
60
T_L= constant
40
20
0
0 5 10 15 20 25 30
94 9101
l - Lead Length ( mm )
Figure 1. Typ. Thermal Resistance vs. Lead Length
100
10
T_j = 175° C
1
0.1
T_j = 25 °C
0.01
0.001
0
16422
0.5 1.0 1.5 2.0 2.5 3.0
V_F - Forward V oltage ( V )
Figure 2. Forward Current vs. Forward Voltage
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2
Document Number 86007
Rev. 1.6, 14-Apr-05