BY527_05 Datasheet, PDF (1/6 Pages) Vishay Siliconix – Standard Avalanche Sinterglass Diode

Standard Avalanche Sinterglass Diode
BY527
Vishay Semiconductors
Features
• Controlled avalanche characteristics
• Glass passivated junction
e2
• Hermetically sealed package
• Low reverse current
• High surge current capability
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
949539
Applications
General purpose
Parts Table
Part
BY527
Mechanical Data
Case: SOD-57 Sintered glass case
Terminals: Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: approx. 369 mg
Type differentiation
V_R = 800 V; I_FAV = 2 A
SOD-57
Package
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Peak reverse voltage, non
repetitive
I_R = 100 µA
Reverse voltage
see electrical characteristics
Peak forward surge current
t_p = 10 ms, half sinewave
Repetitive peak forward current
Average forward current
ϕ = 180 °
Pulse avalanche peak power
T_j = 175 °C, t_p = 20 µs,
half sinus wave
Pulse energy in avalanche
mode, non repetitive (inductive
load switch off)
I_(BR)R = 1 A, T_j = 175 °C
i² * t-rating
Junction and storage
temperature range
Symbol
V_RSM
V_R
I_FSM
I_FRM
I_FAV
P_R
E_R
i²*t
T_j = T_stg
Value
1250
800
50
12
2
1000
20
8
- 55 to + 175
Unit
V
V
A
A
A
W
mJ
A²*s
°C
Document Number 86007
Rev. 1.6, 14-Apr-05
www.vishay.com
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