BY527 Datasheet, PDF (2/4 Pages) NXP Semiconductors – Controlled avalanche rectifier

BY527
Vishay Telefunken
Electrical Characteristics
T_j = 25_C
Parameter
Forward voltage
Reverse current
Breakdown voltage
Diode capacitance
Reverse recovery time
Reverse recovery charge
Test Conditions
I_F=1A
I_F=10A
V_R=800V
V_R=800V, T_j=100°C
I_R=100mA, t_p/T=0.01,
t_p=0.3ms
V_R=0, f=0.47MHz
I_F=0.5A, I_R=1A, i_R=0.25A
I_F=1A, d_i/d_t=5A/ms,
V_R=50V
I_F=1A, d_i/d_t=5A/ms
Type
Symbol Min Typ Max Unit
V_F
0.9 1.0 V
V_F
1.65 V
I_R
0.1 1 mA
I_R
5 10 mA
V_(BR) 1250
V
C_D
50
pF
t_rr
4 ms
t_rr
4 ms
Q_rr
3 mC
Characteristics (T_j = 25_C unless otherwise specified)
120
1.2
l
l
100
1.0
80
0.8
60
T_L=constant
0.6
40
20
0
0 5 10 15 20 25 30
94 9101
l – Lead Length ( mm )
Figure 1. Typ. Thermal Resistance vs. Lead Length
0.4
0.2
R_thJA=100K/W
V_R = V_{R RM} ^PCB
0
0
40
80
120 160 200
94 9163
T_amb – Ambient Temperature ( °C )
Figure 3. Max. Average Forward Current vs.
Ambient Temperature
1000
2.0
100
Scattering Limit
10
1
V_R = V_{R RM}
0.1
0
40
80
120 160 200
94 9176
T_j – Junction Temperature ( °C )
Figure 2. Reverse Current vs. Junction Temperature
1.6
1.2
0.8
v R_thJA 45K/W
0.4
V_R = V_{R RM}
l=12mm
0
0
40
80
120 160 200
94 9172
T_amb – Ambient Temperature ( °C )
Figure 4. Max. Average Forward Current vs.
Ambient Temperature
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Document Number 86007
Rev. 2, 24-Jun-98