BY527 Datasheet, PDF (1/4 Pages) NXP Semiconductors – Controlled avalanche rectifier

Silicon Mesa Rectifier
Features
D Controlled avalanche characteristics
D Glass passivated junction
D Hermetically sealed package
D Low reverse current
D High surge current capability
BY527
Vishay Telefunken
Applications
94 9539
General purpose
Absolute Maximum Ratings
T_j = 25_C
Parameters
Test Conditions
Type Symbol
Value
Unit
Peak reverse voltage, non repetitive
Reverse voltage
Peak forward surge current
t_p=10ms,
half sinewave
V_RSM
1250
V
V_R
800
V
I_FSM
50
A
Repetitive peak forward current
Average forward current
Pulse avalanche peak power
ϕ=180°
T_j=175°C, t_p=20ms,
half sinus wave
I_FRM
12
A
I_FAV
2
A
P_R
1000
W
Pulse energy in avalanche mode,
non repetitive
(inductive load switch off)
Junction and storage
temperature range
I_(BRV_)R=1A, T_j=175°C
i²*t–rating
E_R
i²*t
T_j=T_stg
20
8
–55...+175
mJ
A²*s
°C
Maximum Thermal Resistance
T_j = 25_C
Parameter
Test Conditions
Symbol
Value
Unit
Junction ambient
l=10mm, T_L=constant
R_thJA
45
K/W
on PC board with spacing 25mm
R_thJA
100
K/W
Document Number 86007
Rev. 2, 24-Jun-98
www.vishay.de • FaxBack [phone]
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