BPW96B_11 Datasheet, PDF (2/5 Pages) Vishay Siliconix – Silicon NPN Phototransisto

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BPW96B, BPW96C
Vishay Semiconductors
200
160
120
R_thJA
80
40
0
0
94 8300
20
40
60
80 100
T_amb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL MIN.
Collector emitter breakdown voltage
I_C = 1 mA
V_(BR)CEO
70
Collector emitter dark current
V_CE = 20 V, E = 0
I_CEO
Collector emitter capacitance
V_CE = 5 V, f = 1 MHz, E = 0
C_CEO
Angle of half sensitivity
ϕ
Wavelength of peak sensitivity
Range of spectral bandwidth
Collector emitter saturation voltage
Turn-on time
Turn-off time
Cut-off frequency
E_e = 1 mW/cm², λ = 950 nm,
I_C = 0.1 mA
V_S = 5 V, I_C = 5 mA, R_L = 100 Ω
V_S = 5 V, I_C = 5 mA, R_L = 100 Ω
V_S = 5 V, I_C = 5 mA, R_L = 100 Ω
λ_p
λ_0.1
V_CEsat
t_on
t_off
f_c
TYP.
1
3
± 20
850
450 to 1080
2.0
2.3
180
MAX.
200
0.3
UNIT
V
nA
pF
deg
nm
nm
V
μs
μs
kHz
TYPE DEDICATED CHARACTERISTICS
PARAMETER
TEST CONDITION
Collector light current
E_e = 1 mW/cm², λ = 950 nm,
V_CE = 5 V
PART SYMBOL
BPW96B
I_ca
BPW96C
I_ca
MIN.
2.5
4.5
TYP.
4.5
8
MAX.
7.5
15
UNIT
mA
mA
Rev. 1.8, 23-Aug-11
2
Document Number: 81532
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