BPW96B_11 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Silicon NPN Phototransisto

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BPW96B, BPW96C
Vishay Semiconductors
Silicon NPN Phototransistor
94 8391
DESCRIPTION
BPW96 is a silicon NPN phototransistor with high radiant
sensitivity in clear, T-1¾ plastic package. It is sensitive to
visible and near infrared radiation.
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Leads with stand-off
• High photo sensitivity
• High radiant sensitivity
• Suitable for visible and near infrared radiation
• Fast response times
• Angle of half sensitivity: ϕ = ± 20°
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
APPLICATIONS
• Detector in electronic control and drive circuits
PRODUCT SUMMARY
COMPONENT
BPW96B
BPW96C
I_ca (mA)
2.5 to 7.5
4.5 to 15
Note
• Test condition see table “Basic Characteristics”
ϕ (deg)
± 20
± 20
λ_0.1 (nm)
450 to 1080
450 to 1080
ORDERING INFORMATION
ORDERING CODE
BPW96B
BPW96C
Note
• MOQ: minimum order quantity
PACKAGING
Bulk
Bulk
REMARKS
MOQ: 4000 pcs, 4000 pcs/bulk
MOQ: 4000 pcs, 4000 pcs/bulk
PACKAGE FORM
T-1¾
T-1¾
ABSOLUTE MAXIMUM RATINGS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
t_p/T ≤ 0.5, t_p ≤ 10 ms
T_amb ≤ 47 °C
t≤3s
Connected with Cu wire, 0.14 mm²
V_CEO
V_ECO
I_C
I_CM
P_V
T_j
T_amb
T_stg
T_sd
R_thJA
VALUE
70
5
50
100
150
100
- 40 to + 100
- 40 to + 100
260
350
UNIT
V
V
mA
mA
mW
°C
°C
°C
°C
K/W
Rev. 1.8, 23-Aug-11
1
Document Number: 81532
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000