BPW77N Datasheet, PDF (2/6 Pages) Vishay Siliconix – Silicon NPN Phototransistor

BPW77N
Vishay Telefunken
Basic Characteristics
T_amb = 25_C
Parameter
Test Conditions
Symbol Min
Typ
Max Unit
Collector Emitter Breakdown I_C = 1 mA
V_(BR)CE 70
V
Voltage
O
Collector Dark Current
V_CE = 20 V, E = 0
I_CEO
1
100 nA
Collector Emitter Capacitance V_CE = 5 V, f = 1 MHz, E = 0 C_CEO
6
pF
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
ϕ
±10
deg
ll_0p.5
850
620...980
nm
nm
Collector Emitter Saturation
Voltage
Turn–On Time
Turn–Off Time
lEe = 1 mW/cm2,
= 950 nm, I_C = 1 mA
W ^{VS = 5 V, IC = 5 mA,}
R_L = 100
W ^{VS = 5 V, IC = 5 mA,}
R_L = 100
V_CEsat
t_on
t_off
0.15
0.3
V
6
ms
5
ms
Cut–Off Frequency
W ^{VS = 5 V, IC = 5 mA,}
R_L = 100
f_c
110
kHz
Type Dedicated Characteristics
T_amb = 25_C
Parameter
Test Conditions
l Collector Light Current Ee=1mW/cm2,
=950nm, V_CE=5V
Type
Symbol Min Typ Max Unit
BPW77NA
BPW77NB
I_ca
7.5
10
15 mA
I_ca
10
20
mA
Typical Characteristics (T_amb = 25_C unless otherwise specified)
800
10⁶
600
R_thJC
400
200
R_thJA
0
0
94 8342
25 50 75 100 125 150
T_amb – Ambient Temperature ( °C )
Figure 1. Total Power Dissipation vs.
Ambient Temperature
10⁵
10⁴
10³
10²
V_CE=20V
10¹
E=0
10⁰
20
94 8343
50
100
150
T_amb – Ambient Temperature ( °C )
Figure 2. Collector Dark Current vs. Ambient Temperature
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Document Number 81527
Rev. 2, 20-May-99