BPW77N Datasheet, PDF (1/6 Pages) Vishay Siliconix – Silicon NPN Phototransistor

Silicon NPN Phototransistor
Description
BPW77N is a very high sensitive silicon NPN epitaxial
planar phototransistor in a standard TO–18 hermeti-
cally sealed metal case.
Its glass lens featuring a viewing angle of ±10° makes
it insensible to ambient straylight.
A base terminal is available to enable biasing and sen-
sitivity control.
Features
D Hermetically sealed case
D Lens window
D Narrow viewing angle ϕ = ± 10°
D Exact central chip alignment
D Base terminal available
D High photo sensitivity
D Suitable for visible and near infrared radiation
D Selected into sensitivity groups
Applications
Detector in electronic control and drive circuits
Absolute Maximum Ratings
T_amb = 25_C
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Peak Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Thermal Resistance Junction/Case
Test Conditions
x t_p/T = 0.5, t_p 10 ms
x T_amb 25 °C
xt 5 s
BPW77N
Vishay Telefunken
94 8486
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CM
P_tot
T_j
T_stg
T_sd
R_thJA
R_thJC
Value
80
70
5
50
100
250
125
–55...+125
260
400
150
Unit
V
V
V
mA
mA
mW
°C
°C
°C
K/W
K/W
Document Number 81527
Rev. 2, 20-May-99
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