BPW76_05 Datasheet, PDF (2/6 Pages) Vishay Siliconix – Silicon NPN Phototransistor

BPW76
Vishay Semiconductors
Electrical Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Collector Emitter Breakdown I_C = 1 mA
V_(BR)CEO
70
V
Voltage
Collector-emitter dark current
Collector-emitter capacitance
V_CE = 20 V, E = 0
V_CE = 5 V, f = 1 MHz, E = 0
I_CEO
C_CEO
1
100
nA
6
pF
Optical Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Angle of Half Sensitivity
ϕ
± 40
deg
Wavelength of Peak Sensitivity
λ_p
850
nm
Range of Spectral Bandwidth
λ_0.5
620 to 980
nm
Collector Emitter Saturation
Voltage
E_e = 1 mW/cm², λ = 950 nm,
I_C = 0.1 mA
V_CEsat
0.15
0.3
V
Turn-On Time
V_S = 5 V, I_C = 5 mA, R_L = 100 Ω
t_on
6
µs
Turn-Off Time
V_S = 5 V, I_C = 5 mA, R_L = 100 Ω
t_off
5
µs
Cut-Off Frequency
V_S = 5 V, I_C = 5 mA, R_L = 100 Ω
f_c
110
kHz
Type Dedicated Characteristics
Parameter
Collector Light Current
Test condition
Part
Symbol
Min
Typ.
Max
Unit
E_e = 1 mW/cm², λ = 950 nm, ^BPW76A
I_ca
0.4
0.6
0.8
mA
V_CE = 5 V
BPW76B
I_ca
0.6
1.2
mA
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
800
600
R_thJC
400
200
R_thJA
0
0
94 8342
25 50 75 100 125 150
T_amb – Ambient Temperature ( °C )
Figure 1. Total Power Dissipation vs. Ambient Temperature
10 ⁶
10 ⁵
10 ⁴
10 ³
10 ²
V_CE = 20V
10 ¹
E=0
10 ⁰
20
94 8343
50
100
150
T_amb - Ambient Temperature ( °C )
Figure 2. Collector Dark Current vs. Ambient Temperature
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Document Number 81526
Rev. 1.3, 08-Mar-05