BPW76_05 Datasheet, PDF (1/6 Pages) Vishay Siliconix – Silicon NPN Phototransistor

Silicon NPN Phototransistor
BPW76
Vishay Semiconductors
Description
BPW76 is a high sensitive silicon NPN epitaxial pla-
nar phototransistor in a standard TO-18 hermetically
sealed metal case.
Its flat glass window makes it ideal for applications
with external optics.
A base terminal is available to enable biasing and
sensitivity control.
94 8401
Features
• Hermetically sealed case
• Flat window
• Very wide viewing angle ϕ = ± 40 °
• Exact central chip alignment
• Long range light barrier with an additional optics
• Base terminal available
• High photo sensitivity
• Suitable for visible and near infrared radiation
• Selected into sensitivity groups
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
Detector in electronic control and drive circuits
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector current
Collector peak current
Total Power Dissipation
Junction Temperature
t_p/T = 0.5, t_p ≤ 10 ms
T_amb ≤ 25 °C
Storage Temperature Range
Soldering Temperature
t≤5s
Thermal Resistance Junction/
Ambient
Thermal Resistance Junction/
Case
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CM
P_tot
T_j
T_stg
T_sd
R_thJA
R_thJC
Value
80
70
5
50
100
250
125
- 55 to + 125
260
400
150
Unit
V
V
V
mA
mA
mW
°C
°C
°C
K/W
K/W
Document Number 81526
Rev. 1.3, 08-Mar-05
www.vishay.com
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