BPW17N_11 Datasheet, PDF (2/5 Pages) Vishay Siliconix – Silicon NPN Phototransistor

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BPW17N
Vishay Semiconductors
125
100
75
R_thJA = 450 K/W
50
25
0
0
20
40
60
80
100
94 8308
T_amb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL MIN.
Collector emitter breakdown voltage
I_C = 1 mA
V_(BR)CEO
32
Collector emitter dark current
V_CE = 20 V, E = 0
I_CEO
Collector emitter capacitance
V_CE = 5 V, f = 1 MHz, E = 0
C_CEO
Collector light current
E_e = 1 mW/cm², λ = 950 nm,
V_CE = 5 V
I_ca
0.5
Angle of half sensitivity
ϕ
Wavelength of peak sensitivity
Range of spectral bandwidth
Collector emitter saturation voltage
Turn-on time
Turn-off time
Cut-off frequency
E_e = 1 mW/cm², λ = 950 nm,
I_C = 0.1 mA
V_S = 5 V, I_C = 5 mA, R_L = 100 Ω
V_S = 5 V, I_C = 5 mA, R_L = 100 Ω
V_S = 5 V, I_C = 5 mA, R_L = 100 Ω
λ_p
λ_0.1
V_CEsat
t_on
t_off
f_c
TYP.
1
8
1.0
± 12
825
450 to 1040
4.8
5.0
120
MAX.
200
0.3
UNIT
V
nA
pF
mA
deg
nm
nm
V
μs
μs
kHz
BASIC CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
10⁴
10³
V_CE = 20 V
10²
10¹
10⁰
20
40
60
80
100
94 8235
T_amb - Ambient Temperature (°C)
Fig. 1 - Collector Dark Current vs. Ambient Temperature
2.0
1.8
V_CE = 5 V
1.6
E_e = 1 mW/cm²
λ ^{= 950 nm}
1.4
1.2
1.0
0.8
0.6
0
20
40
60
80
100
94 8239
T_amb - Ambient Temperature (°C)
Fig. 2 - Relative Collector Current vs. Ambient Temperature
Rev. 1.8, 23-Aug-11
2
Document Number: 81516
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