BPW17N_11 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Silicon NPN Phototransistor

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BPW17N
Vishay Semiconductors
Silicon NPN Phototransistor
94 8638-1
DESCRIPTION
BPW17N is a silicon NPN phototransistor with high radiant
sensitivity in clear, T-3/4 plastic package with lens. It is
sensitive to visible and near infrared radiation. On PCB this
package size enables assembly of arrays with 2.54 mm
pitch.
FEATURES
• Package type: leaded
• Package form: T-¾
• Dimensions (in mm): Ø 1.8
• High photo sensitivity
• High radiant sensitivity
• Suitable for visible and near infrared radiation
• Fast response times
• Angle of half sensitivity: ϕ = ± 12°
• Comliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
APPLICATIONS
• Detector in electronic control and drive circuits
PRODUCT SUMMARY
COMPONENT
BPW17N
I_ca (mA)
1.0
Note
• Test condition see table “Basic Characteristics”
ϕ (deg)
± 12
λ_0.1 (nm)
450 to 1040
ORDERING INFORMATION
ORDERING CODE
BPW17N
Note
• MOQ: minimum order quantity
PACKAGING
Bulk
REMARKS
MOQ: 5000 pcs, 5000 pcs/bulk
PACKAGE FORM
T-¾
ABSOLUTE MAXIMUM RATINGS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
t_p/T = 0.5, t_p ≤ 10 ms
T_amb ≤ 55 °C
t≤3s
Connected with Cu wire, 0.14 mm²
V_CEO
V_ECO
I_C
I_CM
P_V
T_j
T_amb
T_stg
T_sd
R_thJA
VALUE
32
5
50
100
100
100
- 40 to + 100
- 40 to + 100
260
450
UNIT
V
V
mA
mA
mW
°C
°C
°C
°C
K/W
Rev. 1.8, 23-Aug-11
1
Document Number: 81516
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000