BPW17N_08 Datasheet, PDF (2/5 Pages) Vishay Siliconix – Silicon NPN Phototransistor,

BPW17N
Silicon NPN Phototransistor, RoHS Compliant _{Vishay Semiconductors}
125
100
75
R_thJA = 450 K/W
50
25
0
0
20
40
60
80
100
94 8308
T_amb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER
TEST CONDITION
Collector emitter breakdown voltage
Collector emitter dark current
Collector emitter capacitance
Collector light current
Angle of half sensitivity
I_C = 1 mA
V_CE = 20 V, E = 0
V_CE = 5 V, f = 1 MHz, E = 0
E_e = 1 mW/cm², λ = 950 nm,
V_CE = 5 V
Wavelength of peak sensitivity
Range of spectral bandwidth
Collector emitter saturation voltage
Turn-on time
Turn-off time
Cut-off frequency
E_e = 1 mW/cm², λ = 950 nm,
I_C = 0.1 mA
V_S = 5 V, I_C = 5 mA, R_L = 100 Ω
V_S = 5 V, I_C = 5 mA, R_L = 100 Ω
V_S = 5 V, I_C = 5 mA, R_L = 100 Ω
Note
T_amb = 25 °C, unless otherwise specified
BASIC CHARACTERISTICS
T_amb = 25 °C, unless otherwise specified
SYMBOL
V_(BR)CEO
I_CEO
C_CEO
I_ca
ϕ
λ_p
λ_0.1
V_CEsat
t_on
t_off
f_c
MIN.
32
0.5
TYP.
MAX.
1
200
8
1.0
± 12
825
450 to 1040
0.3
4.8
5.0
120
UNIT
V
nA
pF
mA
deg
nm
nm
V
µs
µs
kHz
10⁴
10³
V_CE = 20 V
10²
10¹
10⁰
20
40
60
80
100
94 8235
T_amb - Ambient Temperature (°C)
Fig. 2 - Collector Dark Current vs. Ambient Temperature
2.0
1.8
V =5V
CE
1.6
E = 1 mW/cm²
e
λ = 950 nm
1.4
1.2
1.0
0.8
0.6
0
20
40
60
80
100
94 8239
T_amb - Ambient Temperature (°C)
Fig. 3 - Relative Collector Current vs. Ambient Temperature
Document Number: 81516
Rev. 1.7, 08-Sep-08
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