BPW17N_08 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Silicon NPN Phototransistor,

BPW17N
Vishay Semiconductors
Silicon NPN Phototransistor, RoHS Compliant
94 8638-1
DESCRIPTION
BPW17N is a silicon NPN phototransistor with high radiant
sensitivity in clear, T-3/4 plastic package with lens. It is
sensitive to visible and near infrared radiation. On PCB this
package size enables assembly of arrays with 2.54 mm
pitch.
FEATURES
• Package type: leaded
• Package form: T-¾
• Dimensions (in mm): Ø 1.8
• High photo sensitivity
• High radiant sensitivity
• Suitable for visible and near infrared radiation
• Fast response times
• Angle of half sensitivity: ϕ = ± 12°
• Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC
APPLICATIONS
• Detector in electronic control and drive circuits
PRODUCT SUMMARY
COMPONENT
BPW17N
I_ca (mA)
1.0
Note
Test condition see table “Basic Characteristics”
ϕ (deg)
± 12
ORDERING INFORMATION
ORDERING CODE
BPW17N
Note
MOQ: minimum order quantity
PACKAGING
Bulk
REMARKS
MOQ: 5000 pcs, 5000 pcs/bulk
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
Junction temperature
t_p/T = 0.5, t_p ≤ 10 ms
T_amb ≤ 55 °C
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
t≤3s
Connected with Cu wire, 0.14 mm²
Note
T_amb = 25 °C, unless otherwise specified
SYMBOL
V_CEO
V_ECO
I_C
I_CM
P_V
T_j
T_amb
T_stg
T_sd
R_thJA
λ_0.1 (nm)
450 to 1040
PACKAGE FORM
T-¾
VALUE
32
5
50
100
100
100
- 40 to + 100
- 40 to + 100
260
450
UNIT
V
V
mA
mA
mW
°C
°C
°C
°C
K/W
www.vishay.com
370
For technical questions, contact: [e-mail]
Document Number: 81516
Rev. 1.7, 08-Sep-08