BPW16N Datasheet, PDF (2/5 Pages) Vishay Siliconix – Silicon NPN Phototransistor

BPW16N
Vishay Telefunken
Basic Characteristics
T_amb = 25_C
Parameter
Test Conditions
Symbol Min
Typ
Max Unit
Collector Emitter Breakdown I_C = 1 mA
V_(BR)CE 32
V
Voltage
O
Collector Dark Current
V_CE = 20 V, E = 0
I_CEO
1
200 nA
Collector Emitter Capacitance V_CE = 5 V, f = 1 MHz, E = 0 C_CEO
8
pF
Collector Light Current
lEe = 1 mW/cm2,
= 950 nm, V_CE = 5 V
I_ca 0.07
0.14
mA
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
ϕ
±40
deg
ll_0p.5
825
620...960
nm
nm
Collector Emitter Saturation
Voltage
Turn–On Time
Turn–Off Time
lEe = 1 mW/cm2,
= 950 nm, I_C = 0.01 mA
W ^{VS = 5 V, IC = 5 mA,}
R_L = 100
W ^{VS = 5 V, IC = 5 mA,}
R_L = 100
V_CEsat
t_on
t_off
0.3
V
4.8
ms
5.0
ms
Cut–Off Frequency
W ^{VS = 5 V, IC = 5 mA,}
R_L = 100
f_c
120
kHz
Typical Characteristics (T_amb = 25_C unless otherwise specified)
125
10⁴
100
10³
75
V_CE=20V
R_thJA
10²
50
10¹
25
0
0
94 8308
20
40
60
80 100
T_amb – Ambient Temperature ( °C )
Figure 1. Total Power Dissipation vs.
Ambient Temperature
10⁰
20
94 8235
40
60
80
100
T_amb – Ambient Temperature ( °C )
Figure 2. Collector Dark Current vs. Ambient Temperature
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2 (5)
Document Number 81515
Rev. 2, 20-May-99