BPW16N Datasheet, PDF (1/5 Pages) Vishay Siliconix – Silicon NPN Phototransistor

Silicon NPN Phototransistor
Description
BPW16N is a silicon NPN epitaxial planar photo-
transistor in a miniature plastic case with flat window.
With a lead center to center spacing of 2.54mm and a
package width of 2.4mm the devices are easily stack-
able on PC boards and assembled to arrays of
unlimited size.
Due to its waterclear epoxy the device is sensitive to
visible and near infrared radiation.
Features
D Miniature T–¾ flat clear plastic package
D Very wide viewing angle ϕ = ± 40°
D Suitable for 0.1” (2.54 mm) center to center spac-
ing
D Suitable for visible and near infrared radiation
D Compatible with IR diode CQY36N
Applications
Detector in electronic control and drive circuits
Absolute Maximum Ratings
T_amb = 25_C
Parameter
Collector Emitter Voltage
Emitter Collector Voltage
Collector Current
Peak Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
x t_p/T = 0.5, t_p 10 ms
x T_amb 55 °C
xt 3 s
BPW16N
Vishay Telefunken
94 8638
Symbol
Value
Unit
V_CEO
V_ECO
I_C
I_CM
P_tot
T_j
T_stg
T_sd
R_thJA
32
V
5
V
50
mA
100
mA
100
mW
100
°C
–55...+100 °C
260
°C
450
K/W
Document Number 81515
Rev. 2, 20-May-99
www.vishay.de • FaxBack [phone]
1 (5)