BPV10NF Datasheet, PDF (2/5 Pages) Vishay Siliconix – High Speed Silicon PIN Photodiode

BPV10NF
Silicon PIN Photodiode, RoHS Compliant _{Vishay Semiconductors}
BASIC CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
Forward voltage
Breakdown voltage
Reverse dark current
Diode capacitance
Open circuit voltage
Short circuit current
Reverse light current
Temperature coefficient of I_ra
Absolute spectral sensitivity
Angle of half sensitivity
I_F = 50 mA
I_R = 100 µA, E = 0
V_R = 20 V, E = 0
V_R = 0 V, f = 1 MHz, E = 0
E_e = 1 mW/cm², λ = 870 nm
E_e = 1 mW/cm², λ = 870 nm
E_e = 1 mW/cm², λ = 870 nm,
V_R = 5 V
E_e = 1 mW/cm², λ = 950 nm,
V_R = 5 V
E_e = 1 mW/cm², λ = 870 nm,
V_R = 5 V
V_R = 5 V, λ = 870 nm
V_F
V_(BR)
I_ro
C_D
V_O
I_K
I_ra
I_ra
TK_Ira
s(λ)
ϕ
Wavelength of peak sensitivity
Range of spectral bandwidth
Quantum efficiency
λ_p
λ_0.5
λ = 950 nm
η
Noise equivalent power
Detectivity
Rise time
Fall time
V_R = 20 V, λ = 950 nm
V_R = 20 V, λ = 950 nm
V_R = 50 V, R_L = 50 Ω, λ = 820 nm
V_R = 50 V, R_L = 50 Ω, λ = 820 nm
NEP
D*
t_r
t_f
Note
T_amb = 25 °C, unless otherwise specified
MIN.
60
30
TYP.
1.0
1
11
450
50
55
60
- 0.1
0.55
± 20
940
790 to 1050
70
3 x 10^-14
3 x 10¹²
2.5
2.5
MAX.
1.3
5
UNIT
V
V
nA
pF
mV
µA
µA
µA
%/K
A/W
deg
nm
nm
%
W/√Hz
cm√Hz/W
ns
ns
BASIC CHARACTERISTICS
T_amb = 25 °C, unless otherwise specified
1000
100
10
1
20
40
V_R = 20 V
60
80
100
94 8436
T_amb - Ambient Temperature (°C)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
1.4
1.2
1.0
0.8
V_R = 5 V
E_e
=1
λ=
mW/cm²
870 nm
0.6
0
94 8621
20
40
60
80
100
T_amb - Ambient Temperature (°C)
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
Document Number: 81503
Rev. 1.7, 16-Sep-08
For technical questions, contact: [e-mail]
www.vishay.com
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