BPV10NF Datasheet, PDF (1/5 Pages) Vishay Siliconix – High Speed Silicon PIN Photodiode

BPV10NF
Vishay Semiconductors
Silicon PIN Photodiode, RoHS Compliant
16140-1
DESCRIPTION
BPV10NF is a PIN photodiode with high speed and high
radiant sensitivity in black, T-1¾ plastic package with
daylight blocking filter. Filter bandwidth is matched with
870 nm to 950 nm IR emitters.
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Leads with stand-off
• Radiant sensitive area (in mm²): 0.78
• High radiant sensitivity
• Daylight blocking filter matched with 870 nm to
950 nm emitters
• High bandwidth: > 100 MHz at V_R = 12 V
• Fast response times
• Angle of half sensitivity: ϕ = ± 20°
• Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC
APPLICATIONS
• High speed detector for infrared radiation
• Infrared remote control and free air data transmission
systems, e.g. in combination with TSFFxxxx series IR
emitters
PRODUCT SUMMARY
COMPONENT
BPV10NF
Note
Test condition see table “Basic Characteristics”
I_ra (mA)
60
ϕ (deg)
± 20
λ_0.5 (nm)
790 to 1050
ORDERING INFORMATION
ORDERING CODE
BPV10NF
Note
MOQ: minimum order quantity
PACKAGING
Bulk
REMARKS
MOQ: 4000 pcs, 4000 pcs/bulk
PACKAGE FORM
T-1¾
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
Reverse voltage
Power dissipation
Junction temperature
T_amb ≤ 25 °C
Operating temperature range
Storage temperature range
Soldering temperature
t ≤ 5 s, 2 mm from body
Thermal resistance junction/ambient
Connected with Cu wire, 0.14 mm²
Note
T_amb = 25 °C, unless otherwise specified
SYMBOL
V_R
P_V
T_j
T_amb
T_stg
T_sd
R_thJA
VALUE
60
215
100
- 40 to + 100
- 40 to + 100
260
350
UNIT
V
mW
°C
°C
°C
°C
K/W
www.vishay.com
338
For technical questions, contact: [e-mail]
Document Number: 81503
Rev. 1.7, 16-Sep-08