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| BFS17A Datasheet, PDF (2/11 Pages) NXP Semiconductors – NPN 3 GHz wideband transistor | |||
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BFS17A/BFS17AR/BFS17AW
Vishay Semiconductors
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
m Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3
plated with 35 m Cu
Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Collector cut-off current
VCE = 25 V, VBE = 0
Collector-base cut-off current
VCB = 10 V, IE = 0
Emitter-base cut-off current
VEB = 2.5 V, IC = 0
Collector-emitter breakdown voltage IC = 1 mA, IB = 0
Collector-emitter saturation voltage IC = 20 mA, IB = 2 mA
DC forward current transfer ratio VCE = 1 V, IC = 2 mA
VCE = 1 V, IC = 25 mA
Symbol
Value
Unit
RthJA
450
K/W
Symbol Min Typ Max Unit
ICES
100 mA
ICBO
IEBO
100 nA
10 mA
V(BR)CEO 15
V
VCEsat
0.1 0.6 V
hFE 20 50 150
hFE
20
Electrical AC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Transition frequency
Collector-base capacitance
Collector-emitter capacitance
Emitter-base capacitance
Noise figure
Power gain
Linear output voltage â two
tone intermodulation test
Third order intercept point
Test Conditions
VCE = 5 V, IC = 2 mA, f = 300 MHz
VCE = 5 V, IC = 14 mA, f = 300 MHz
VCE = 5 V, IC = 30 mA, f = 300 MHz
VCB = 10 V, f = 1 MHz
VCE = 5 V, f = 1 MHz
W VEB = 0.5 V, f = 1 MHz
VCE = 5 V, IC = 2 mA, ZS = 50 ,
f = 800 MHz
W VCE = 10 V, IC = 14 mA, ZS = 50 ,
f = 800 MHz
VCE = 10 V, IC = 14 mA, dIM = 60 dB,
W f1 = 806 MHz, f2 = 810 MHz,
ZS = ZL = 50
VCE = 10 V, IC = 14 mA, f = 800 MHz
Symbol Min Typ Max Unit
fT
1.5
fT
3.5
fT
3 3.2
Ccb
0.6
Cce
0.1
Ceb
1.1
F
2.5
GHz
GHz
GHz
pF
pF
pF
dB
Gpe
13
dB
V1 = V2
150
mV
IP3
23.5
dBm
www.vishay.com
2 (10)
Document Number 85039
Rev. 4, 20-Jan-99
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