BFS17A Datasheet, PDF (1/11 Pages) NXP Semiconductors – NPN 3 GHz wideband transistor

BFS17A/BFS17AR/BFS17AW
Vishay Semiconductors
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Wide band, low noise, small signal amplifiers up to
UHF frquencies, high speed logic applications and os-
cillator applications.
Features
D Low noise figure
D High power gain
D Small collector capacitance
1
1
94 9280
2
3
13 581
BFS17A Marking: E2
Plastic case (SOT 23)
1 = Collector, 2 = Base, 3 = Emitter
1
9510527
3
2
13 581
BFS17AR Marking: E5
Plastic case (SOT 23)
1 = Collector, 2 = Base, 3 = Emitter
13 652
23
13 570
BFS17AW Marking: WE2
Plastic case (SOT 323)
1 = Collector, 2 = Base, 3 = Emitter
Absolute Maximum Ratings
T_amb = 25_C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Test Conditions
T_amb ≤ 60 °C
Document Number 85039
Rev. 4, 20-Jan-99
Symbol
Value
Unit
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_j
T_stg
25
V
15
V
2.5
V
25
mA
200
mW
150
°C
–65 to +150 °C
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