BFR193T Datasheet, PDF (2/4 Pages) Vishay Siliconix – Silicon NPN Planar RF Transistor

BFR193T/BFR193TW
Vishay Telefunken
Electrical DC Characteristics
T_amb = 25_C, unless otherwise specified
Parameter
Test Conditions
Collector-emitter cut-off current
V_CE = 20 V, V_EB = 0
Collector-base cut-off current
V_CB = 10 V
Emitter-base cut-off current
V_EB = 1 V, I_C = 0
Collector-emitter breakdown voltage I_C = 1 mA
Collector-emitter saturation voltage I_C = 50 mA, I_B = 5 mA
DC forward current transfer ratio V_CE = 8 V, I_C = 30 mA
Symbol Min Typ Max Unit
I_CES
100 mA
I_CBO
I_EBO
100 nA
1 mA
V_(BR)CEO 12
V
V_CEsat
0.1 0.5 V
h_FE
50 100 150
Electrical AC Characteristics
T_amb = 25_C, unless otherwise specified
Parameter
Transition frequency
Collector-base capacitance
Collector-emitter capacitance
Emitter-base capacitance
Noise figure
Power gain
Transducer gain
Third order intercept point
at output
Test Conditions
V_CE = 8 V, I_C = 50 mA, f = 1 GHz
V_CB = 10 V, f = 1 MHz
V_CE = 10 V, f = 1 MHz
W ^{VEB = 0.5 V, f = 1 MHz}
Z_S = Z_Sopt,Z_L=50 , f = 900 MHz,
W ^{VCE = 8 V, IC = 10 mA}
Z_S = Z_Sopt,Z_L=50 , f = 2 GHz,
W ^{VCE = 8 V, IC = 10 mA}
Z_S = Z_Sopt,Z_L=50 , f = 900 MHz,
W ^{VCE = 8 V, IC = 30 mA}
Z_S = Z_Sopt,Z_L=50 , f = 2 GHz,
W ^{VCE = 8 V, IC = 30 mA}
Z_O=50 , f = 900 MHz,
W ^{VCE = 8 V, IC = 30 mA}
Z_O=50 , f = 2 GHz,
V_CE = 8 V, I_C = 30 mA
f = 900 MHz, V_CE = 8 V, I_C = 50 mA
Symbol Min Typ Max Unit
f_T
6
8
GHz
C_cb
0.6 1.0 pF
C_ce
0.25
pF
C_eb
1.6
pF
1.2
dB
F
2.1
dB
15
dB
G_pe
9
dB
13
dB
|S_21e2|
7
dB
IP₃
34
dBm
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2 (4)
Document Number
Rev. 2, 14-Feb-00