BFR193T Datasheet, PDF (1/4 Pages) Vishay Siliconix – Silicon NPN Planar RF Transistor

BFR193T/BFR193TW
Vishay Telefunken
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For low–noise, high–gain applications such as power
amplifiers up to 2GHz and for linear broadband
amplifiers.
Features
D Low noise figure
D High transition frequency f_T = 8 GHz
D Excellent large-signal behaviour
1
1
94 9280
2
3
13 581
BFR193T Marking: RC
Plastic case (SOT 23)
1 = Collector, 2 = Base, 3 = Emitter
13 652
23
13 570
BFR193TW Marking: WRC
Plastic case (SOT 323)
1 = Collector, 2 = Base, 3 = Emitter
Absolute Maximum Ratings
T_amb = 25_C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Test Conditions
T_amb ≤ 45 °C
Symbol
Value
Unit
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_j
T_stg
20
V
12
V
2
V
80
mA
420
mW
150
°C
–65 to +150 °C
Maximum Thermal Resistance
T_amb = 25_C, unless otherwise specified
Parameter Test Conditions
Junction ambient mounted on glass fibre printed board
(25 x 20 x 1.5) mm³ plated with 35mm Cu
Symbol
Value
Unit
R_thJA
250
K/W
Document Number
Rev. 2, 14-Feb-00
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