BFP93A Datasheet, PDF (2/9 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA)

BFP93A / BFP93AW
Vishay Semiconductors
Electrical DC Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Collector-emitter cut-off current V_CE = 20 V, V_BE = 0
Collector-base cut-off current V_CB = 15 V, I_E = 0
Emitter-base cut-off current
V_EB = 2 V, I_C = 0
Collector-emitter breakdown
voltage
I_C = 1 mA, I_B = 0
Collector-emitter saturation
voltage
I_C = 50 mA, I_B = 5 mA
DC forward current transfer ratio V_CE = 5 V, I_C = 30 mA
VISHAY
Symbol
Min
Typ.
Max
Unit
I_CES
100
µA
I_CBO
100
nA
I_EBO
10
µA
V_(BR)CEO
12
V
V_CEsat
0.1
0.4
V
h_FE
40
90
150
Electrical AC Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Transition frequency
V_CE = 5 V, I_C = 30 mA,
f_T
f = 500 MHz
6
GHz
Collector-base capacitance
V_CB = 10 V, f = 1 MHz
C_cb
0.45
pF
Collector-emitter capacitance V_CE = 10 V, f = 1 MHz
C_ce
0.2
pF
Emitter-base capacitance
V_EB = 0.5 V, f = 1 MHz
C_eb
1.25
pF
Noise figure
V_CE = 8 V, Z_S = 50 Ω,
F
f = 800 MHz, I_C = 5 mA
1.6
dB
V_CE = 8 V, Z_S = 50 Ω,
F
f = 800 MHz, I_C = 25 mA
2.1
dB
Power gain
V_CE = 8 V, Z_S = 50 Ω, Z_L = Z_Lopt,
G_pe
17
dB
I_C = 25 mA, f = 800 MHz
V_CE = 8 V, Z_S = 50 Ω, Z_L = Z_Lopt,
G_pe
10
dB
I_C = 25 mA, f = 2 GHz
Linear output voltage - two tone V_CE = 8 V, I_C = 25 mA,
V₁ = V₂
260
mV
intermodulation test
d_IM = 60 dB, f₁ = 806 MHz,
f₂ = 810 MHz, Z_S = Z_L = 50 Ω
Third order intercept point
V_CE = 8 V, I_C = 25 mA,
IP₃
f = 800 MHz
31
dBm
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2
Document Number 85020
Rev. 1.4, 03-Sep-04