BFP93A Datasheet, PDF (1/9 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA)

VISHAY
Silicon NPN Planar RF Transistor
BFP93A / BFP93AW
Vishay Semiconductors
Features
• High power gain
• Low noise figure
• High transition frequency
Applications
RF amplifier up to GHz range.
Mechanical Data
Typ: BFP93A
Case: SOT-143 Plastic case
Weight: approx. 8.0 mg
Marking: FE
Pinning:
1 = Collector, 2 = Emitter
3 = Base, 4 = Emitter
Typ: BFP93AW
Case: SOT-343 Plastic case
Weight: approx. 6.0 mg
Marking: WFE
Pinning:
1 = Collector, 2 = Emitter,
3 = Base, 4 = Emitter
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Parameter
Collector-base voltage
Test condition
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
T_amb ≤ 60 °C
Storage temperature range
2
1
SOT-143
3
4
21
SOT-343
34
Electrostatic sensitive device.
Observe precautions for handling. 13579
Symbol
Value
Unit
V_CBO
20
V
V_CEO
12
V
V_EBO
2
V
I_C
50
mA
P_tot
200
mW
T_j
150
°C
T_stg
-65 to +150
°C
Maximum Thermal Resistance
Parameter
Junction ambient
Test condition
1)
1) _{on glass fibre printed board (25 x 20 x 1.5) mm}3 _{plated with 35 µm Cu}
Symbol
R_thJA
Document Number 85020
Rev. 1.4, 03-Sep-04
Value
450
Unit
K/W
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