BFP193T_08 Datasheet, PDF (2/6 Pages) Vishay Siliconix – Silicon NPN Planar RF Transistor

BFP193T / BFP193TW / BFP193TRW
Vishay Semiconductors
Maximum Thermal Resistance
Parameter
Junction ambient
Test condition
1)
1) _{on glass fibre printed board (25 x 20 x 1.5) mm}3 _{plated with 35 μm Cu}
Symbol
R_thJA
Value
250
Electrical DC Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Collector-emitter cut-off current V_CE = 20 V, V_BE = 0
Collector-base cut-off current V_CB = 10 V, I_E = 0
Emitter-base cut-off current
V_EB = 1 V, I_C = 0
Collector-emitter breakdown
voltage
I_C = 1 mA, I_B = 0
Collector-emitter saturation
voltage
I_C = 50 mA, I_B = 5 mA
DC forward current transfer ratio V_CE = 8 V, I_C = 30 mA
Symbol
Min
I_CES
I_CBO
I_EBO
V_(BR)CEO
12
V_CEsat
h_FE
50
Typ.
0.1
100
Unit
K/W
Max
Unit
100
μA
100
nA
1
μA
V
0.5
V
150
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2
Document Number 85015
Rev. 1.3, 05-Sep-08