BFP193T_08 Datasheet, PDF (1/6 Pages) Vishay Siliconix – Silicon NPN Planar RF Transistor

Not for new design, this product will be obsoleted soon
BFP193T / BFP193TW / BFP193TRW
Vishay Semiconductors
Silicon NPN Planar RF Transistor
Features
• Low noise figure
• High transition frequency f_T = 8 GHz
e3
• Excellent large signal behaviour
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
2
1
SOT-143
3
4
21
SOT-343
Applications
For low noise and high gain applications such as
power amplifiers up to 2 GHz and for linear broad-
band amplifiers.
34
12
SOT-343R
Mechanical Data
Typ: BFP193T
Case: SOT-143 Plastic case
Weight: approx. 8.0 mg
Marking: 193
Pinning:
1 = Collector, 2 = Emitter,
3 = Base, 4 = Emitter
Typ: BFP193TW
Case: SOT-343 Plastic case
Weight: approx. 6.0 mg
Marking: W19
43
18383
Electrostatic sensitive device.
Observe precautions for handling.
Pinning:
1 = Collector, 2 = Emitter,
3 = Base, 4 = Emitter
Typ: BFP193TRW
Case: SOT-343R Plastic case
Weight: approx. 6.0 mg
Marking: W91
Pinning:
1 = Collector, 2 = Emitter,
3 = Base, 4 = Emitter
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
T_amb ≤ 45 °C
Storage temperature range
Symbol
Value
Unit
V_CBO
20
V
V_CEO
12
V
V_EBO
2
V
I_C
80
mA
P_tot
420
mW
T_j
150
°C
T_stg
- 65 to + 150
°C
Document Number 85015
Rev. 1.3, 05-Sep-08
www.vishay.com
1