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| BFP182T_05 Datasheet, PDF (2/5 Pages) Vishay Siliconix – Silicon NPN Planar RF Transistor | |||
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BFP182T / BFP182TW / BFP182TRW
Vishay Semiconductors
Maximum Thermal Resistance
Parameter
Junction ambient
Test condition
1)
1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 µm Cu
Symbol
RthJA
Value
450
Electrical DC Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Collector-emitter cut-off current VCE = 15 V, VBE = 0
Collector-base cut-off current VCB = 10 V, IE = 0
Emitter-base cut-off current
VEB = 1 V, IC = 0
Collector-emitter breakdown
voltage
IC = 1 mA, IB = 0
Collector-emitter saturation
voltage
IC = 15 mA, IB =1.5 mA
DC forward current transfer ratio VCE = 6 V, IC = 5 mA
VCE = 8 V, IC = 20 mA
Symbol
Min
ICES
ICBO
IEBO
V(BR)CEO
10
VCEsat
hFE
50
hFE
Typ.
0.1
90
100
Unit
K/W
Max
Unit
100
µA
100
nA
1
µA
V
0.4
V
150
www.vishay.com
2
Document Number 85013
Rev. 1.4, 15-Apr-05
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