BFP182T_05 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Silicon NPN Planar RF Transistor

BFP182T / BFP182TW / BFP182TRW
Vishay Semiconductors
Silicon NPN Planar RF Transistor
Features
• Low power applications
• Low noise figure
e3
• High transition frequency
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
2
1
SOT-143
3
4
21
SOT-343
Applications
For low noise and high gain broadband amplifiers at
collector currents from 1 mA to 20 mA.
Mechanical Data
Typ: BFP182T
Case: SOT-143 Plastic case
Weight: approx. 8.0 mg
Marking: 82P
Pinning:
1 = Collector, 2 = Emitter,
3 = Base, 4 = Emitter
Typ: BFP182TW
Case: SOT-343 Plastic case
Weight: approx. 6.0 mg
Marking: W82
Pinning:
1 = Collector, 2 = Emitter,
3 = Base, 4 = Emitter
34
12
SOT-343R
43
18383
Electrostatic sensitive device.
Observe precautions for handling.
Typ: BFP182TRW
Case: SOT-343R Plastic case
Weight: approx. 6.0 mg
Marking: WSG
Pinning:
1 = Collector, 2 = Emitter,
3 = Base, 4 = Emitter
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
T_amb ≤ 60 °C
Storage temperature range
Symbol
Value
Unit
V_CBO
15
V
V_CEO
10
V
V_EBO
2
V
I_C
35
mA
P_tot
200
mW
T_j
150
°C
T_stg
-65 to +150
°C
Document Number 85013
Rev. 1.4, 15-Apr-05
www.vishay.com
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