BAS81 Datasheet, PDF (2/4 Pages) NXP Semiconductors – Schottky barrier diodes

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Characteristics (T_j = 25_C unless otherwise specified)
14
V_R = 60 V
12
10
R_thJA=
540K/W
8
P_R–Limit
@100%V_R
6
P_R–Limit
4
@80%V_R
2
0
25
15794
50
75 100 125 150
T_j – Junction Temperature ( °C )
Figure 1. Max. Reverse Power Dissipation vs. Junction
Temperature
1000
100
T_j = 150°C
10
T_j = 25°C
1
0.1
0.01
0
15796
0.5
1.0
1.5
2.0
V_F – Forward Voltage ( V )
Figure 3. Forward Current vs. Forward Voltage
1000.0
100.0
V_R = V_RRM
10.0
1.0
0.1
25
15795
50
75 100 125 150
T_j – Junction Temperature ( °C )
Figure 2. Reverse Current vs. Junction Temperature
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.1
15797
f=1MHz
1.0
10.0
V_R – Reverse Voltage ( V )
100.0
Figure 4. Diode Capacitance vs. Reverse Voltage
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2 (4)
Document Number 85509
Rev. 3, 01-April-99