BAS81 Datasheet, PDF (1/4 Pages) NXP Semiconductors – Schottky barrier diodes

Schottky Barrier Diodes
BAS81...BAS83
Vishay Telefunken
Features
D Integrated protection ring against static dis-
charge
D Low capacitance
D Low leakage current
D Low forward voltage drop
D Very low switching time
Applications
HF–Detector
94 9371
Protection circuit
Diode for low currents with a low supply voltage
Small battery charger
Power supplies
DC / DC converter for notebooks
Absolute Maximum Ratings
T_j = 25_C
Parameter
Reverse voltage
Test Conditions
Peak forward surge current
Repetitive peak forward current
Forward current
Junction temperature
Storage temperature range
t_p=1s
Type
BAS81
BAS82
BAS83
Symbol Value
Unit
V_R
40
V
V_R
50
V
V_R
60
V
I_FSM
500
mA
I_FRM
150
mA
I_F
30
mA
T_j
125
°C
T_stg –65...+150 °C
Maximum Thermal Resistance
T_j = 25_C
Parameter
Junction ambient
Test Conditions
Symbol
Value
Unit
on PC board 50mmx50mmx1.6mm R_thJA
320
K/W
Electrical Characteristics
T_j = 25_C
Parameter
Test Conditions
Forward voltage
Reverse current
Diode capacitance
I_F=0.1mA
I_F=1mA
I_F=15mA
V_R=V_Rmax
V_R=1V, f=1MHz
Type
Symbol Min Typ Max Unit
V_F
330 mV
V_F
410 mV
V_F
1V
I_R
200 nA
C_D
1.6 pF
Document Number 85509
Rev. 3, 01-Apr-99
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