95SQ015_12 Datasheet, PDF (2/7 Pages) Vishay Siliconix – Schottky Rectifier, 9 A

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VS-95SQ015, VS-95SQ015-M3
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
See fig. 1
V_FM ⁽¹⁾
Maximum reverse leakage current
See fig. 2
I_RM ⁽¹⁾
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
C_T
L_S
dV/dt
Note
(1) _{Pulse width < 300 μs, duty cycle < 2 %}
TEST CONDITIONS
9A
18 A
T_J = 25 °C
9A
18 A
T_J = 75 °C
T_J = 100 °C
T_J = 25 °C
T_J = 100 °C
V_R = 12 V
V_R = 5 V
V_R = Rated V_R
V_R = 5 V_DC, (test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from body
Rated V_R
VALUES
0.31
0.37
0.25
0.31
310
190
7
348
1300
10.0
10 000
UNITS
V
mA
pF
nH
V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction temperature range
T_J
Maximum storage temperature range
Maximum thermal resistance,
junction to lead
T_Stg
R_thJL
DC operation; see fig. 4
1/8" lead length
Typical thermal resistance,
junction to air
R_thJA
Approximate weight
Marking device
Case style DO-204AR (JEDEC)
VALUES
- 55 to 125
- 55 to 150
UNITS
°C
8.0
°C/W
44
1.4
g
0.049
oz.
95SQ015
Revision: 09-Sep-11
2
Document Number: 93419
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