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95SQ015_12 Datasheet, PDF (1/7 Pages) Vishay Siliconix – Schottky Rectifier, 9 A
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VS-95SQ015, VS-95SQ015-M3
Vishay Semiconductors
Schottky Rectifier, 9 A
DO-204AR
Cathode
Anode
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM max.
TJ max.
Diode variation
EAS
DO-204AR
9A
15 V
0.25 V
348 mA at 100 °C
100 °C
Single die
4.5 mJ
FEATURES
• 125 °C TJ operation (VR < 5 V)
• Optimized for OR-ing applications
• Ultralow forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and
long term reliability
• High purity, high temperature epoxy
encapsulation for enhanced mechanical strength and
moisture resistance
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for commercial level
• Halogen-free according to IEC 61249-2-21 definition
(-M3 only)
DESCRIPTION
The VS-95SQ015... axial leaded Schottky rectifier has been
optimized for ultralow forward voltage drop specifically for
the OR-ing of parallel power supplies. The proprietary
barrier technology allows for reliable operation up to 100 °C
junction temperature. Typical applications are in parallel
switching power supplies, converters, reverse battery
protection, and redundant power subsystems.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
TJ
Rectangular waveform
tp = 5 μs sine
9 Apk, TJ = 75 °C
Range
VALUES
9
15
2900
0.25
- 55 to 100
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
VS-95SQ015
15
VS-95SQ015-M3
15
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
See fig. 5
IF(AV)
Maximum peak one cycle
non-repetitive surge current
IFSM
See fig. 7
Non-repetitive avalanche energy
EAS
Repetitive avalanche current
IAR
TEST CONDITIONS
50 % duty cycle at TC = 55 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied
TJ = 25 °C, IAS = 1 A, L = 9 mH
Current decaying linearly to zero in 1 μs
Frequency limited by, TJ maximum VA = 3 x VR typical
VALUES
9
2900
400
4.5
1
UNITS
A
mJ
A
Revision: 09-Sep-11
1
Document Number: 93419
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000