40CTQ150PBF_12 Datasheet, PDF (2/7 Pages) Vishay Siliconix – Schottky Rectifier, 2 x 20 A

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VS-40CTQ150PbF, VS-40CTQ150-N3
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop per leg
See fig. 1
V_FM ⁽¹⁾
Maximum reverse leakage current per leg
See fig. 2
Maximum junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
Note
(1) _{Pulse width < 300 μs, duty cycle < 2 %}
I_RM ⁽¹⁾
C_T
L_S
dV/dt
TEST CONDITIONS
20 A
40 A
T_J = 25 °C
20 A
40 A
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
V_R = Rated V_R
V_R = 5 V_DC (test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated V_R
VALUES
0.93
1.16
0.71
0.85
50
15
450
8.0
10 000
UNITS
V
µA
mA
pF
nH
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
T_J, T_Stg
Maximum thermal resistance,
junction to case per leg
Maximum thermal resistance,
junction to case per package
Typical thermal resistance,
case to heatsink
R_thJC
DC operation
See fig. 4
DC operation
R_thCS Mounting surface, smooth and greased
Approximate weight
Mounting torque
Marking device
minimum
maximum
Non-lubricated threads
Case style TO-220AB
VALUES
- 55 to 175
UNITS
°C
1.5
0.75
°C/W
0.5
2
g
0.07
oz.
6 (5)
12 (10)
kgf · cm
(lbf · in)
40CTQ150
Revision: 26-Aug-11
2
Document Number: 94214
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