English
Language : 

40CTQ150PBF_12 Datasheet, PDF (1/7 Pages) Vishay Siliconix – Schottky Rectifier, 2 x 20 A
www.vishay.com
VS-40CTQ150PbF, VS-40CTQ150-N3
Vishay Semiconductors
Schottky Rectifier, 2 x 20 A
Base 2
common
cathode
TO-220AB
Anode
2
Anode
1 Common 3
cathode
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM max.
TJ max.
Diode variation
EAS
TO-220AB
2 x 20 A
150 V
0.71 V
15 mA at 125 °C
175 °C
Common cathode
1.0 mJ
FEATURES
• 175 °C TJ operation
• Very low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical strength
and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
The VS-40CTQ... center tap Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. The proprietary barrier technology allows for
reliable operation up to 175 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
Rectangular waveform
VRRM
IFSM
tp = 5 μs sine
VF
20 Apk, TJ = 125 °C (per leg)
TJ
VALUES
40
150
1500
0.71
- 55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
VS-40CTQ150PbF VS-40CTQ150-N3
150
150
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average
forward current
See fig. 5
per leg
per device
IF(AV)
Maximum peak one cycle non-repetitive
surge current per leg
IFSM
See fig. 7
Non-repetitive avalanche energy per leg
EAS
Repetitive avalanche current per leg
IAR
TEST CONDITIONS
50 % duty cycle at TC = 140 °C, rectangular waveform
VALUES
20
40
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied
TJ = 25 °C, IAS = 1.5 A, L = 0.9 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
1500
250
1.0
1.5
UNITS
A
mJ
A
Revision: 26-Aug-11
1
Document Number: 94214
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000