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30CTQ080GPBF Datasheet, PDF (2/7 Pages) Vishay Siliconix – Schottky Rectifier, 2 x 15 A
VS-30CTQ...GPbF Series, VS-30CTQ...G-N3 Series
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Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop per leg
See fig. 1
VFM (1)
Maximum reverse leakage current per leg
See fig. 2
Maximum junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
IRM (1)
CT
LS
dV/dt
TEST CONDITIONS
15 A
30 A
TJ = 25 °C
15 A
30 A
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
VR = Rated VR
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated VR
VALUES
0.86
1.05
0.69
0.82
0.28
7.0
500
8.0
10 000
UNITS
V
mA
pF
nH
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
TJ, TStg
Maximum thermal resistance,
junction to case per leg
Maximum thermal resistance,
junction to case per package
Typical thermal resistance,
case to heatsink
RthJC
DC operation
RthCS
Mounting surface, smooth and greased
(Only for TO-220)
Approximate weight
Mounting torque
minimum
maximum
Marking device
Case style TO-220AB
VALUES
- 55 to 175
UNITS
°C
3.25
1.63
°C/W
0.50
2
g
0.07
oz.
6 (5)
12 (10)
kgf · cm
(lbf · in)
30CTQ080G
30CTQ100G
Revision: 26-Aug-11
2
Document Number: 94194
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