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30CTQ080GPBF Datasheet, PDF (1/7 Pages) Vishay Siliconix – Schottky Rectifier, 2 x 15 A
VS-30CTQ...GPbF Series, VS-30CTQ...G-N3 Series
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 2 x 15 A
Base 2
common
cathode
TO-220AB
Anode
2
Anode
1 Common 3
cathode
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM max.
TJ max.
Diode variation
EAS
TO-220AB
2 x 15 A
80 V, 100 V
0.69 V
7.0 mA at 125 °C
175 °C
Common cathode
7.50 mJ
FEATURES
• 175 °C TJ operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical strength
and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
This center tap Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
TJ
Rectangular waveform
tp = 5 μs sine
15 Apk, TJ = 125 °C (per leg)
Range
VALUES
30
100
650
0.69
- 55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
VS-
30CTQ080GPbF
Maximum DC reverse voltage
VR
80
Maximum working peak reverse voltage VRWM
VS-
30CTQ080G-N3
80
VS-
30CTQ100GPbF
100
VS-
30CTQ100G-N3
100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average
forward current
See fig. 5
per device
per leg
IF(AV)
Maximum peak one cycle
non-repetitive surge current per leg
IFSM
See fig. 7
Non-repetitive avalanche energy per leg
EAS
Repetitive avalanche current per leg
IAR
TEST CONDITIONS
50 % duty cycle at TC = 129 °C, rectangular waveform
VALUES
30
15
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied
TJ = 25 °C, IAS = 0.50 A, L = 60 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
650
210
7.50
0.50
UNITS
A
mJ
A
Revision: 26-Aug-11
1
Document Number: 94194
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000