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20CTH03PBF_12 Datasheet, PDF (2/9 Pages) Vishay Siliconix – Hyperfast Rectifier, 2 x 10 A FRED Pt®
VS-20CTH03PbF, VS-20CTH03-N3, VS-20CTH03FPPbF, VS-20CTH03FP-N3
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Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time
Peak recovery current
Reverse recovery charge
trr
IRRM
Qrr
IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V
IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
IF = 10 A
dIF/dt = 200 A/μs
VR = 200 V
TJ = 125 °C
-
-
-
-
-
31
-
42
-
2.4
-
5.6
-
36
-
120
MAX.
35
30
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDTIONS
Maximum junction and storage
temperature range
TJ, TStg
Thermal resistance,
per diode
junction to case
(FULL-PAK) per diode
RthJC
Mounting surface, flat, smooth
and greased
Marking device
Case style TO-220AB
Case style TO-220 FULL-PAK
MIN.
- 65
-
-
TYP.
MAX.
-
175
-
1.5
-
3.9
20CTH03
20CTH03FP
UNITS
°C
°C/W
100
10
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
1
0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
VF - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
100
10
1
0.1
0.01
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
0.001
50
100
150
200
250
300
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Revision: 02-Jan-12
2
Document Number: 94010
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