20CTH03PBF_12 Datasheet, PDF (1/9 Pages) Vishay Siliconix – Hyperfast Rectifier, 2 x 10 A FRED Pt®

VS-20CTH03PbF, VS-20CTH03-N3, VS-20CTH03FPPbF, VS-20CTH03FP-N3
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Vishay Semiconductors
Hyperfast Rectifier, 2 x 10 A FRED Pt^®
TO-220AB
Base
common
cathode
2
TO-220 FULL-PAK
2
Common
1 ^cathode 3
Anode
Anode
VS-20CTH03PbF
VS-20CTH03-N3
2
Common
1 ^cathode 3
Anode
Anode
VS-20CTH03FPPbF
VS-20CTH03FP-N3
PRODUCT SUMMARY
Package
I_F(AV)
V_R
V_F at I_F
t_rr typ.
T_J max.
Diode variation
TO-220AB, TO-220FP
2 x 10 A
300 V
1.25 V
See Recovery table
175 °C
Common cathode
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
• Fully isolated package (V_INS = 2500 V_RMS)
• UL E78996 pending
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION/APPLICATIONS
300 V series are the state of the art hyperfast recovery
rectifiers designed with optimized performance of forward
voltage drop and hyperfast recovery time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diodes in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
per diode
Average rectified forward current (FULL-PAK) per diode
per device
Non-repetitive peak surge current
Operating junction and storage temperatures
SYMBOL
V_RRM
I_F(AV)
I_FSM
T_J, T_Stg
TEST CONDITIONS
T_C = 160 °C
T_C = 135 °C
T_J = 25 °C
VALUES
300
10
20
120
- 65 to 175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Breakdown voltage,
blocking voltage
V_BR,
V_R
I_R = 100 μA
300
I_F = 10 A
-
Forward voltage
V_F
I_F = 10 A, T_J = 125 °C
-
V_R = V_R rated
-
Reverse leakage current
I_R
T_J = 125 °C, V_R = V_R rated
-
Junction capacitance
C_T
V_R = 300 V
-
Series inductance
L_S
Measured lead to lead 5 mm from package body
-
TYP.
-
1.05
0.85
-
6
30
8
MAX.
-
1.25
0.95
20
200
-
-
UNITS
V
μA
pF
nH
Revision: 02-Jan-12
1
Document Number: 94010
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