DG441LE Datasheet, PDF (12/18 Pages) Vishay Siliconix – Low Charge Injection and Leakage, Quad SPST Switches

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APPLICATIONS
+ 12 V
+ 12 V
IN
DG442L ^V+
150 Ω
+ 24 V
R_L
I = 3A
VN0300L, M
GND V -
10 kΩ
+ 12 V
0 = Load Off
1 = Load On
Fig. 7 - Power MOSFET Driver
DG441LE, DG442LE
Vishay Siliconix
V_IN
+
-
+ 12 V
1/4 DG442L
S
D
C_H ⁺
-
V_OUT
IN
0V
H = Sample
L = Hold
Fig. 8 - Open Loop Sample-and-Hold
V_IN
GAIN₁
A_V = 1
GAIN₂
A_V = 10
GAIN₃
A_V = 20
GAIN₄
A_V = 100
+
-
+ 12 V
V+
DG441L or DG442L
V-
GND
V
V_OUT
Gain error is determined only by the resistor
tolerance. Op amp offset and CMRR will limit ac-
curacy of circuit.
R₁
90 kΩ
R₂
5 kΩ
R₃
4 kΩ
R₄
1 kΩ
With SW₄ Closed
V_{OUT =}
V_IN
R₁ + R₂ + R₃ + R₄
R₄
= 100
Fig. 9 - Precision-Weighted Resistor Programmable-Gain Amplifier
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Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?76754.
S16-0392-Rev. A, 07-Mar-16
12
Document Number: 76754
For technical questions, contact: [e-mail]
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000