VS-42CTQ030S-M3 Datasheet, PDF (1/8 Pages) Vishay Siliconix – Center tap configuration

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VS-42CTQ030S-M3, VS-42CTQ030-1-M3
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 20 A
D²PAK
TO-262
Base
common
cathode
2
Base
common
cathode
2
2
1 _Common 3
Anode cathode Anode
VS-42CTQ030S-M3
2
1 _Common 3
Anode cathode Anode
VS-42CTQ030-1-M3
PRODUCT SUMMARY
I_F(AV)
V_R
2 x 20 A
30 V
V_F at I_F
0.38 V
I_RM
183 mA at 125 °C
T_J max.
E_AS
Package
150 °C
13 mJ
TO-263AB (D²PAK), TO-262AA
Diode variation
Common cathode
FEATURES
• 150 °C T_J operation
• Center tap configuration
• Very low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long
term reliability
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Designed and qualified according to JEDEC^®-JESD 47
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
This center tap Schottky rectifier module has been
optimized for very low forward voltage drop, with moderate
leakage. The proprietary barrier technology allows for
reliable operation up to 150 °C junction temperature. Typical
applications are in switching power supplies, freewheeling
diodes, and reverse battery protection.
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MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
I_F(AV)
Rectangular waveform
V_RRM
I_FSM
t_p = 5 μs sine
V_F
20 A_pk, T_J = 125 °C (per leg)
T_J
Range
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V_R
V_RWM
VALUES
40
30
1100
0.38
-55 to 150
VS-42CTQ030S-M3
VS-42CTQ030-1-M3
30
UNITS
A
V
A
V
°C
UNITS
V
Revision: 21-Oct-14
1
Document Number: 94940
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000