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NCSERIES_15 Datasheet, PDF (1/4 Pages) Vishay Siliconix – Thin Film Single Value Chip and Wire Capacitors
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NC Series
Vishay Electro-Films
Thin Film Single Value Chip and Wire Capacitors
Product may not be to scale
The NC series of thin film capacitors has the advantage of
increased performance and smaller size when compared
with its thick film counterparts. These chips are available in
sizes down to 20 mil square and in capacitances up to
1000 pF.
Parts require epoxy or eutectic die attach to substrate and
one wire bond.
These chips are manufactured using Vishay Electro-Films
(EFI) sophisticated Thin Film equipment and manufacturing
technology. The NC’s are 100 % electrically tested and
visually inspected to MIL-STD-883.
ELECTRICAL SCHEMATIC
NCAA/NCBB/NCCC
TOP BONDING PADS
FEATURES
• Wire bondable
• Small size: 0.020 inches square to 0.060 inches
square
• Substrate: Silicon with gold backing
• Dielectric: Silicon dioxide/silicon nitride
• Capacitance range: 0.5 pF to 1000 pF
• Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS
The NC series of capacitor chips are designed for assembly
in hybrid circuits using conventional wire-bonding
techniques. They provide excellent stability and
performance, and their small size gives the hybrid designer
greater layout flexibility. They are available as MNOS or
MOS capacitors. The MOS version is to be preferred when
low dielectric absorption is required.
ELECTRICAL SCHEMATIC
NCDD/NCEE
TOP BONDING PADS
BACK OF CHIP
BACK OF CHIP
WV (DC) VALUES AND TOLERANCES
CAPACITOR MODEL
NCAA
NCBB
Case Size
0202
0303
Capacitance Values
0.5 to 51
33 to 100
Tolerance
± 2.5, ± 5, ± 10, ± 2.5, ± 5, ± 10,
± 20, ± 25
± 20
DC Working Voltage
200
150
STANDARD ELECTRICAL SPECIFICATIONS
PARAMETER
Capacitance Range
Maximum Working Voltage
Peak Voltage at + 25 °C
Dissipation Factor, 1 kHz, 1 VRMS, + 25 °C
Q at 1 mHz, 50 mVRMS, + 25 °C
TCC, - 55 °C to + 150°C
Insulation Resistance at Working Voltage, + 25 °C
Operating Temperature Range
Thermal Shock
Moisture Resistance, MIL-STD-202, Method 106
Short Time Overload, + 25 °C, 5 s, 1.5 x Working Voltage
High Temperature Exposure, 100 h at 150°C Ambient
Life, MIL-STD-202, Method 108
Condition D, + 125 °C Ambient, 100 h at Working Voltage
NCCC
0404
56 to 220
± 2.5, ± 5, ± 10,
± 20
190
NCDD
0505
150 to 510
± 2.5, ± 5, ± 10,
± 20
140
NCEE
0606
360 to 1000
± 2.5, ± 5, ± 10,
± 20
65
VALUE
0.5 to 1000
200
1.5 x working voltage
0.05 MNOS
0.1 MOS
1000 min.
+ 45 ± 25 MNOS
+ 15 ± 25 MOS
109 min.
- 55 to + 125
± 0.25 + 0.25 pF max. C/C
± 1.0 + 0.25 pF max. C/C
± 0.25 + 0.25 pF max.
± 0.25 + 0.25 pF max. C/C
± 0.25 + 0.25 pF max. C/C
UNIT
pF
%
V
UNIT
pF
V
%
ppm/°C

°C
%
%
%
%
%
Revision: 02-May-13
1
Document Number: 61033
For technical questions, contact: efi@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000