HFA30PA60CPBF_11 Datasheet, PDF (1/8 Pages) Vishay Siliconix – HEXFRED Ultrafast Soft Recovery Diode, 2 x 15 A

VS-HFA30PA60CPbF
Vishay Semiconductors
HEXFRED^®
Ultrafast Soft Recovery Diode, 2 x 15 A
Base
common
cathode
2
TO-247AC
1
3
Anode
1
2
Anode
2
Common
cathode
PRODUCT SUMMARY
Package
I_F(AV)
V_R
V_F at I_F
t_rr (typ.)
T_J max.
Diode variation
TO-247AC
2 x 15 A
600 V
1.7 V
19 ns
150 °C
Single die
FEATURES
• Ultrafast and ultrasoft recovery
• Very low I_RRM and Q_rr
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
VS-HFA30PA60CPbF is a state of the art center tap ultrafast
recovery diode. Employing the latest in epitaxial construction
and advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 600 V and 15 A per leg continuous
current, the VS-HFA30PA60CPbF is especially well suited
for use as the companion diode for IGBTs and MOSFETs. In
addition to ultrafast recovery time, the HEXFRED^® product
line features extremely low values of peak recovery current
(I_RRM) and does not exhibit any tendency to “snap-off” during
the t_b portion of recovery. The HEXFRED features combine
to offer designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED VS-HFA30PA60CPbF is
ideally suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
per leg
Maximum continuous forward current
per device
Single pulse forward current
Maximum repetitive forward current
SYMBOL
V_R
I_F
I_FSM
I_FRM
Maximum power dissipation
P_D
Operating junction and storage temperature range
T_J, T_Stg
TEST CONDITIONS
T_C = 100 °C
T_C = 25 °C
T_C = 100 °C
VALUES
600
15
30
150
60
74
29
- 55 to + 150
UNITS
V
A
W
°C
Document Number: 94068 For technical questions within your region, please contact one of the following:
Revision: 23-May-11
[e-mail], [e-mail], [e-mail]
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000