HFA08TB60 Datasheet, PDF (1/6 Pages) International Rectifier – Ultrafast, Soft Recovery Diode

HFA08TB60
Vishay High Power Products
HEXFRED^®
Ultrafast Soft Recovery Diode, 8 A
Base
cathode
2
1
3
Cathode Anode
TO-220AC
PRODUCT SUMMARY
V_R
V_F at 8 A at 25 °C
I_F(AV)
t_rr (typical)
T_J (maximum)
Q_rr (typical)
dI_(rec)M/dt (typical)
I_RRM
600 V
1.7 V
8A
18 ns
150 °C
65 nC
240 A/µs
5.0 A
FEATURES
• Ultrafast recovery
• Ultrasoft recovery
• Very low I_RRM
• Very low Q_rr
• Specified at operating conditions
• Designed and qualified for industrial level
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
HFA08TB60 is a state of the art ultrafast recovery diode.
Employing the latest in epitaxial construction and advanced
processing techniques it features a superb combination of
characteristics which result in performance which is
unsurpassed by any rectifier previously available. With basic
ratings of 600 V and 8 A continuous current, the HFA08TB60
is especially well suited for use as the companion diode for
IGBTs and MOSFETs. In addition to ultrafast recovery time,
the HEXFRED^® product line features extremely low values of
peak recovery current (I_RRM) and does not exhibit any
tendency to “snap-off” during the t_b portion of recovery. The
HEXFRED features combine to offer designers a rectifier
with lower noise and significantly lower switching losses in
both the diode and the switching transistor. These
HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The
HEXFRED HFA08TB60 is ideally suited for applications in
power supplies and power conversion systems (such as
inverters), motor drives, and many other similar applications
where high speed, high efficiency is needed.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
Maximum repetitive forward current
Maximum power dissipation
Operating junction and storage temperature range
SYMBOL
V_R
I_F
I_FSM
I_FRM
P_D
T_J, T_Stg
TEST CONDITIONS
T_C = 100 °C
T_C = 25 °C
T_C = 100 °C
VALUES
600
8.0
60
24
36
14
- 55 to + 150
UNITS
V
A
W
°C
Document Number: 93044
Revision: 30-Jul-08
For technical questions, contact: [e-mail]
www.vishay.com
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