70-W212NMA600SC-M200P Datasheet, PDF (9/31 Pages) Vincotech – Integrated DC-snubber capacitors

70-W212NMA600SC-M200P
datasheet
Figure 13
Typical reverse recovery charge as a
function of collector current
Q_rr = f(I_C)
60
50
40
30
20
10
Buck
half bridge IGBT and neutral point FWD
FWD
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q_rr = f(R_gon)
50
Q_{rr High T}
40
30
Q_{rr Low T}
20
10
0
0
0
At
200
400
600
800
1000 _{I C (A)} 1200
0
2
4
6
At
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
350
V
±15
V
1
Ω
T_j =
V_R =
I_F =
V_GE =
25/125 °C
350
V
596
A
±15
V
Figure 15
Typical reverse recovery current as a
function of collector current
I_RRM = f(I_C)
500
400
300
FWD
I_{RRM High T}
I_{RRM Low T}
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I_RRM = f(R_gon)
500
400
300
FWD
Q_{rr High T}
Q_{rr Low T}
8
R gon ( Ω) 10
FWD
200
200
I_{RRM High T}
I_{RRM Low T}
100
100
0
0
0
200
400
600
800
1000 _{I C (A)} 1200
0
2
4
6
8
R gon ( Ω) 10
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
350
V
±15
V
1
Ω
At
T_j =
V_R =
I_F =
V_GE =
25/125 °C
350
V
596
A
±15
V
copyright Vincotech
9
24 Mar. 2015 / Revision 6