70-W212NMA600SC-M200P Datasheet, PDF (14/31 Pages) Vincotech – Integrated DC-snubber capacitors

70-W212NMA600SC-M200P
datasheet
Figure 5
Typical switching energy losses
as a function of collector current
E = f(I_C)
50
Boost
neutral point IGBT and half bridge FWD
IGBT
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R_G)
120
E_{off High T}
100
40
80
30
E_{off Low T}
60
E_{on High T}
20
E_{on Low T}
40
10
20
0
0
200
400
600
800
With an inductive load at
T_j =
V_CE =
V_GE =
R_gon =
R_goff =
25/125 °C
350
V
±15
V
1
Ω
1
Ω
Figure 7
Typical reverse recovery energy loss
as a function of collector current
E_rec = f(I_c)
20
1000
1200
I C (A)
0
0
2
4
6
With an inductive load at
T_j =
V_CE =
V_GE =
I_C =
25/125 °C
350
V
±15
V
600
A
FWD
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E_rec = f(R_G)
20
E_{rec High T}
16
15
12
10
8
E_{rec Low T}
5
4
0
0
0
200
400
600
800
1000 _{I C (A)} 1200
0
2
4
6
With an inductive load at
T_j =
25/125 °C
V_CE =
350
V
V_GE =
±15
V
R_gon =
1
Ω
With an inductive load at
T_j =
25/125 °C
V_CE =
350
V
V_GE =
±15
V
I_C =
600
A
IGBT
E_{on High T}
E_{on Low T}
E_{off High T}
E_{off Low T}
8 R _G ( Ω ) 10
FWD
E_{rec High T}
E_{rec Low T}
8 _{R G ( Ω )} 10
copyright Vincotech
14
24 Mar. 2015 / Revision 6