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V23990-P829-F-P2-14 Datasheet, PDF (8/16 Pages) Vincotech – Trench Fieldstop IGBT4 Technology
Output Inverter
V23990-P829-F-PM
preliminary datasheet
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(Ic)
6000
dI0/dt
dIrec/dt
5000
Output inverter FRED
4000
3000
2000
1000
0
0
10
20
30
40
50
60
70
80
I 9C0(A) 100
At
Tj =
VCE =
VGE =
Rgon =
25/150 °C
600
V
±15
V
8
Ω
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon)
14000
12000
Output inverter FRED
dI0/dt
dIrec/dt
10000
8000
6000
4000
2000
0
0
8
16
24
32 R Gon ( Ω) 40
At
Tj =
VR =
IF =
VGE =
25/150 °C
600
V
50
A
±15
V
Figure 19
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
Output inverter IGBT
Figure 20
FRED transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
Output inverter FRED
100
100
10-1
10-2
10-5
10-4
10-3
10-2
At
D=
RthJH =
tp / T
0,48
K/W
IGBT thermal model values
D = 0,5
0,2
0,1
10-1
0,05
0,02
0,01
0,005
0.000
10-2
10-1
100 t p (s)
1011
10-5
10-4
10-3
10-2
At
D=
RthJH =
tp / T
0,66
K/W
FRED thermal model values
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
100
t p (s) 1011
R (C/W)
0,09
0,20
0,12
0,04
0,03
Tau (s)
1,18E+00
1,13E-01
3,32E-02
2,20E-03
3,13E-04
R (C/W)
0,02
0,08
0,17
0,26
0,08
0,06
Tau (s)
9,51E+00
1,19E+00
1,35E-01
2,81E-02
2,16E-03
3,03E-04
copyright by Vincotech
8
Revision: 2