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V23990-P829-F-P2-14 Datasheet, PDF (3/16 Pages) Vincotech – Trench Fieldstop IGBT4 Technology
Parameter
Inverter Transistor
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
Inverter Diode
Diode forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Thermal resistance chip to heatsink per chip
Thermistor
Rated resistance
Deviation of R100
Power dissipation given Epcos-Typ
B-value
Symbol
Characteristic Values
Conditions
VGE [V] or
VGS [V]
Vr [V] or
VCE [V] or
VDS [V]
IC [A] or
IF [A] or
ID [A]
Tj
V23990-P829-F-PM
preliminary datasheet
Value
Min
Typ
Max
Unit
VGE(th) VCE=VGE
VCE(sat)
15
ICES
0
IGES
20
Rgint
td(on)
tr
td(off)
tf
Rgoff=8 Ω
Rgon=8 Ω
±15
Eon
Eoff
Cies
Coss f=1MHz
0
Crss
QGate Vcc=960
±15
RthJH
Thermal foil
thickness=76um
Kunze foil KU-ALF5
1200
0
600
25
0,0017
50
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
50
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
50
Tj=25°C
5,00
5,80
6,50
V
1,60
1,93
2,30
2,35
V
0,02
mA
650
nA
4
96
101
17
24
214
281
87
122
2,70
4,21
2,74
4,53
2770
Ω
ns
mWs
205
pF
160
240
nC
0,48
K/W
VF
50
IRRM
trr
Qrr Rgon=8 Ω
±15
600
50
di(rec)max
/dt
Erec
RthJH
Thermal foil
thickness=76um
Kunze foil KU-ALF5
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1,4
1,83
2,3
V
1,80
81
A
85
139
ns
316
4,80
9,71
μC
4803
1209
A/μs
1,79
mWs
3,97
0,66
K/W
R25
DR/R
Tol. ±5%
R100=435Ω
P
B(25/100) Tol. ±3%
Tj=25°C
4,2
4,7
5,8
kΩ
Tc=100°C
2,6
%/K
Tj=25°C
210
mW
Tj=25°C
3530
K
copyright by Vincotech
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Revision: 2